Paper Titles

Defect Engineering for Bicmos-Technology
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Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
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Implantation Induced Defect Modification in P Doped Bipolar Structures
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The Properties of the Defects in Heavy Implanted Silicon
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Defect Formation and Lateral Oxidation during Locos Processing
p.93

Defects and Their Influence on Parasitic Devices in Integrated Circuits
p.101

Volume Defect Formation in CZ SI Wafers and Related Electrical Effects
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Buried Layer Processing for Advanced Bipolar Technology
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Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Formation and Lateral Oxidation during...

Defect Formation and Lateral Oxidation during Locos Processing

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

93-100

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.93

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Online since:

January 1989

Authors:

D. Knoll, T. Grabolla, K.-E. Ehwald

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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