Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography

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Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

119-126

DOI:

10.4028/www.scientific.net/SSP.6-7.119

Citation:

E. Hild et al., "Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography", Solid State Phenomena, Vols. 6-7, pp. 119-126, 1989

Online since:

January 1989

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$35.00

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