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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Oxygen Precipitation in Silicon: Correlation of...

Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

119-126

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.119

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Online since:

January 1989

Authors:

Erzsébet Hild, J. Seres, E.K. Pal, S. Nouredin, T. Kormàny

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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