Paper Titles

Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
p.119

Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors
p.127

On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process
p.129

Creation of Deep Denuded Zones in CZ Silicon Wafers
p.135

Defect Engineering for ULSI Epitaxial Silicon
p.143

Computer-Simulation of Gold-Redistribution in Silicon
p.159

An Attempt to Simulate Oxygen Precipitation in Silicon
p.165

Defect Formation in Dislocation-Free Silicon Containing Oxygen
p.171

Influence of Preannealing on Oxygen Precipitation
p.173

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Engineering for ULSI Epitaxial Silicon

Defect Engineering for ULSI Epitaxial Silicon

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

143-158

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.143

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Online since:

January 1989

Authors:

George A. Rozgonyi, R.R. Kola

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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