Paper Titles

Creation of Deep Denuded Zones in CZ Silicon Wafers
p.135

Defect Engineering for ULSI Epitaxial Silicon
p.143

Computer-Simulation of Gold-Redistribution in Silicon
p.159

An Attempt to Simulate Oxygen Precipitation in Silicon
p.165

Defect Formation in Dislocation-Free Silicon Containing Oxygen
p.171

Influence of Preannealing on Oxygen Precipitation
p.173

Silicon Intrinsic Gettering Durability and Effectiveness
p.179

Effect of Heat Treatment on Defect Formation in Silicon
p.181

Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
p.187

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Formation in Dislocation-Free Silicon...

Defect Formation in Dislocation-Free Silicon Containing Oxygen

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology III

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

171-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.171

Citation:

Cite this paper

Online since:

January 1989

Authors:

M.G. Mil'vidskii, Vladimir V. Voronkov, V.J. Reznik

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: