Paper Titles

Computer-Simulation of Gold-Redistribution in Silicon
p.159

An Attempt to Simulate Oxygen Precipitation in Silicon
p.165

Defect Formation in Dislocation-Free Silicon Containing Oxygen
p.171

Influence of Preannealing on Oxygen Precipitation
p.173

Silicon Intrinsic Gettering Durability and Effectiveness
p.179

Effect of Heat Treatment on Defect Formation in Silicon
p.181

Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
p.187

Defect Reactions in Semiconductors
p.197

Electronic States in Plastically Deformed Silicon
p.211

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Silicon Intrinsic Gettering Durability and...

Silicon Intrinsic Gettering Durability and Effectiveness

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

179-180

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.179

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Online since:

January 1989

Authors:

D. Sachelarie, A. Badoiu, G. Gradinaru, M. Stoica, M. Sachelarie, V. Vivsencu

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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