Paper Titles

Influence of Preannealing on Oxygen Precipitation
p.173

Silicon Intrinsic Gettering Durability and Effectiveness
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Effect of Heat Treatment on Defect Formation in Silicon
p.181

Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
p.187

Defect Reactions in Semiconductors
p.197

Electronic States in Plastically Deformed Silicon
p.211

Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions
p.221

Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
p.235

Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Reactions in Semiconductors

Defect Reactions in Semiconductors

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

197-210

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.197

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Online since:

January 1989

Authors:

Masashi Suezawa, Koji Sumino

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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