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Defect Reactions in Semiconductors
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Electronic States in Plastically Deformed Silicon
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Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions
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Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
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Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
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Impurity Gettering in Semicrystalline Silicon Solar Cells
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Formation and Defect Structure of Fe-B-Fe Complexes in Silicon
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Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries
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Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Dependence of Phosphorus Transient Enhanced...

Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

243-250

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.243

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Online since:

January 1989

Authors:

P. Zaumseil, U. Winter, R. Fabbri, Marco Servidori, Sandro Solmi

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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