Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon

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Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

243-250

DOI:

10.4028/www.scientific.net/SSP.6-7.243

Citation:

P. Zaumseil et al., "Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon", Solid State Phenomena, Vols. 6-7, pp. 243-250, 1989

Online since:

January 1989

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$35.00

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