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Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
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Impurity Gettering in Semicrystalline Silicon Solar Cells
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Formation and Defect Structure of Fe-B-Fe Complexes in Silicon
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Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries
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Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors
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Kink-Point Defect Interaction and Mobility of Dislocations in Semiconductors
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I. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed Silicon
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Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy
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Auger Recombination in Heavily-Doped p+ Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Photo-Thermal Ionization Spectroscopy of Point...

Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

277-288

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.277

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Online since:

January 1989

Authors:

Hermann G. Grimmeiss, Mats Kleverman

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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