Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy

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Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

309-314

DOI:

10.4028/www.scientific.net/SSP.6-7.309

Citation:

H. Bartsch and W. Einbrodt, "Recrystallization and Defect Formation in Ion-Implanted Silicon Studied by Transmission Electron Microscopy", Solid State Phenomena, Vols. 6-7, pp. 309-314, 1989

Online since:

January 1989

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$35.00

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