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Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
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Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Formation and Impurity Redistribution Due...

Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

221-234

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.221

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Online since:

January 1989

Authors:

V.V. Bolotov, V.M. Emeksuzyan, V.A. Stuchinski

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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