Paper Titles

Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
p.187

Defect Reactions in Semiconductors
p.197

Electronic States in Plastically Deformed Silicon
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Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions
p.221

Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
p.235

Dependence of Phosphorus Transient Enhanced Diffusion on Depth Position of Extended Defects in Ion Implanted Silicon
p.243

Impurity Gettering in Semicrystalline Silicon Solar Cells
p.251

Formation and Defect Structure of Fe-B-Fe Complexes in Silicon
p.257

Electrical Activity and Impurity Precipitation in Silicon Grain Boundaries
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Interaction of Point Defects with Interstitial...

Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

235-242

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.235

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Online since:

January 1989

Authors:

A.L. Aseev, Liudmila I. Fedina, D. Hoehl, H. Bartsch

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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