Defect Formation in Dislocation-Free Silicon Containing Oxygen
p.171
p.171
Influence of Preannealing on Oxygen Precipitation
p.173
p.173
Silicon Intrinsic Gettering Durability and Effectiveness
p.179
p.179
Effect of Heat Treatment on Defect Formation in Silicon
p.181
p.181
Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
p.187
p.187
Defect Reactions in Semiconductors
p.197
p.197
Electronic States in Plastically Deformed Silicon
p.211
p.211
Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions
p.221
p.221
Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope
p.235
p.235
Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 6-7)
Pages:
187-196
Citation:
Online since:
January 1989
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© 1989 Trans Tech Publications Ltd. All Rights Reserved
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