Paper Titles

Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors
p.127

On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process
p.129

Creation of Deep Denuded Zones in CZ Silicon Wafers
p.135

Defect Engineering for ULSI Epitaxial Silicon
p.143

Computer-Simulation of Gold-Redistribution in Silicon
p.159

An Attempt to Simulate Oxygen Precipitation in Silicon
p.165

Defect Formation in Dislocation-Free Silicon Containing Oxygen
p.171

Influence of Preannealing on Oxygen Precipitation
p.173

Silicon Intrinsic Gettering Durability and Effectiveness
p.179

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Computer-Simulation of Gold-Redistribution in...

Computer-Simulation of Gold-Redistribution in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology III

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

159-164

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.159

Citation:

Cite this paper

Online since:

January 1989

Authors:

H. Gdanitz, K. Schmalz

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: