Paper Titles

Volume Defect Formation in CZ SI Wafers and Related Electrical Effects
p.103

Buried Layer Processing for Advanced Bipolar Technology
p.111

Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
p.119

Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors
p.127

On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process
p.129

Creation of Deep Denuded Zones in CZ Silicon Wafers
p.135

Defect Engineering for ULSI Epitaxial Silicon
p.143

Computer-Simulation of Gold-Redistribution in Silicon
p.159

An Attempt to Simulate Oxygen Precipitation in Silicon
p.165

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7On the Two-Step Nucleation in Internal Gettering...

On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology III

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

129-134

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.129

Citation:

Cite this paper

Online since:

January 1989

Authors:

J. Jablonski, K. Kucharski, J. Wojciechowski

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: