Paper Titles

Investigations of the Behaviour of Transition Metals in Silicon
p.49

Defect Engineering for Bicmos-Technology
p.57

Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
p.65

Implantation Induced Defect Modification in P Doped Bipolar Structures
p.73

The Properties of the Defects in Heavy Implanted Silicon
p.79

Defect Formation and Lateral Oxidation during Locos Processing
p.93

Defects and Their Influence on Parasitic Devices in Integrated Circuits
p.101

Volume Defect Formation in CZ SI Wafers and Related Electrical Effects
p.103

Buried Layer Processing for Advanced Bipolar Technology
p.111

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7The Properties of the Defects in Heavy Implanted...

The Properties of the Defects in Heavy Implanted Silicon

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

79-92

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.79

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Online since:

January 1989

Authors:

V.G. Litovchenko, B.N. Romanyuk

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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