Paper Titles

Dislocation Motion in Compound Semiconductors
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Dislocation Structures after Microdeformation of CaAs Single Crystals
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The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi
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Electron Pulse Irradiation of Semiconductor Devices
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Charge Collection Microscopy in Gettering and Defect Engineering
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Lifetime in Silicon
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Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering
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Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in Silicon
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The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Charge Collection Microscopy in Gettering and...

Charge Collection Microscopy in Gettering and Defect Engineering

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

367-382

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.367

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Online since:

January 1989

Authors:

Martin Kittler

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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