Charge Collection Microscopy in Gettering and Defect Engineering
p.367
p.367
Lifetime in Silicon
p.383
p.383
Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering
p.395
p.395
Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in Silicon
p.403
p.403
The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals
p.409
p.409
The Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor Surfaces
p.411
p.411
Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals
p.423
p.423
Positron Sudies of Thermal-Induced Defects in Silicon
p.435
p.435
DLTS Investigations of the Carbon-Related Centers in Si
p.443
p.443
The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals
Abstract:
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Periodical:
Solid State Phenomena (Volumes 6-7)
Pages:
409-410
Citation:
Online since:
January 1989
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Сopyright:
© 1989 Trans Tech Publications Ltd. All Rights Reserved
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