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Scanning Infra-Red Microscope Investigation of Oxide Particles in Czochralski Silicon Heat-Treated for Intrinsic Gettering
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Laser Scanning Tomography: A Study of the Defect Cluster Nucleation and Growth in Silicon
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The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals
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The Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor Surfaces
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Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals
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Positron Sudies of Thermal-Induced Defects in Silicon
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DLTS Investigations of the Carbon-Related Centers in Si
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The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
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Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Synchrotron Radiation X-Ray Studies on Strain in...

Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

423-434

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.423

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Online since:

January 1989

Authors:

J. Matsui

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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