Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals
p.423
p.423
Positron Sudies of Thermal-Induced Defects in Silicon
p.435
p.435
DLTS Investigations of the Carbon-Related Centers in Si
p.443
p.443
The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
p.449
p.449
Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
p.453
p.453
Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement
p.457
p.457
Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
p.461
p.461
Trap-Spectroscopy in Insulating Layers
p.467
p.467
Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS Technique
p.471
p.471
Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
Abstract:
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Periodical:
Solid State Phenomena (Volumes 6-7)
Pages:
453-456
Citation:
Online since:
January 1989
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Сopyright:
© 1989 Trans Tech Publications Ltd. All Rights Reserved
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