Electrically Active Near-Surface Implantation Defects in Silicon and GaAs

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Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

461-466

DOI:

10.4028/www.scientific.net/SSP.6-7.461

Citation:

J. Bollmann and H.A. Klose, "Electrically Active Near-Surface Implantation Defects in Silicon and GaAs", Solid State Phenomena, Vols. 6-7, pp. 461-466, 1989

Online since:

January 1989

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$35.00

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