Paper Titles

DLTS Investigations of the Carbon-Related Centers in Si
p.443

The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
p.449

Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
p.453

Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement
p.457

Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
p.461

Trap-Spectroscopy in Insulating Layers
p.467

Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS Technique
p.471

A Theoretical Model of the Surface Avalanche Method
p.477

Application of High Tc Superconducting Thin Films in Microelectronics-Possibilities and Illusions
p.483

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Electrically Active Near-Surface Implantation...

Electrically Active Near-Surface Implantation Defects in Silicon and GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology III

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

461-466

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.461

Citation:

Cite this paper

Online since:

January 1989

Authors:

J. Bollmann, H.A. Klose

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: