Paper Titles

The Effect of Low-Energy Electron and Ion Beams on Properties of Near Surface Layers in Semiconductor Crystals
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The Capacitance Microscope: A Non-Contacting Stylus Technique for the Investigation of Semicionductor Surfaces
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Synchrotron Radiation X-Ray Studies on Strain in Semiconductor Crystals
p.423

Positron Sudies of Thermal-Induced Defects in Silicon
p.435

DLTS Investigations of the Carbon-Related Centers in Si
p.443

The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
p.449

Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
p.453

Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement
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Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7DLTS Investigations of the Carbon-Related Centers...

DLTS Investigations of the Carbon-Related Centers in Si

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

443-448

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.443

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Online since:

January 1989

Authors:

Charalamos A. Londos

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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