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Positron Sudies of Thermal-Induced Defects in Silicon
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DLTS Investigations of the Carbon-Related Centers in Si
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The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
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Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Positron Sudies of Thermal-Induced Defects in...

Positron Sudies of Thermal-Induced Defects in Silicon

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

435-442

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.435

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Online since:

January 1989

Authors:

N.Yu. Arutyunov, V.Yu. Traschakov

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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