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The Noise Spectroscopy of Defects and Impurities in Compensated Silicon
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Determination of Generation Lifetime and Surface Generation Velocity by Sine-Voltage Sweep C-V Method
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Silicon Plates Homogeneity Diagnostics Method by Means of Semiconductor-Electrolyte Structure Surface Photovoltage Measurement
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Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
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Trap-Spectroscopy in Insulating Layers
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Insulator Investigations in MIS Structures with Constant-Capacitance-DLTS Technique
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A Theoretical Model of the Surface Avalanche Method
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Semiconductor Dynamic Memories
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HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Trap-Spectroscopy in Insulating Layers

Trap-Spectroscopy in Insulating Layers

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

467-470

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.467

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Online since:

January 1989

Authors:

Hans Joachim Fitting

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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