Paper Titles

Neat Field Optics: Comeback of Light in Microscopy
p.251

Near-Field Cathodoluminescence (NF-CL) Investigations on Semiconducting Materials
p.257

Local Stress, Surface Reconstruction, and Bulk Defect Nucleation: An STM Study on Silicon
p.261

Correlative SEM/STM Study of Local Electronic Properties in Compound Semiconductors
p.273

Observation and Modelization of the Electrostatic Force due to the Local Variations of the Surface Potential by Electrostatic Force Microscopy (EFM)
p.283

The Sloc Positron Beam Technique – A Unique Tool for the Study of Vacancy-Type Defects in Semiconductors
p.291

Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon
p.301

Grain Growth of ZnSe Recrystallized in the Solid Phase
p.311

Lateral Doping Inhomogeneities as Revealed by μ-NEXAFS and μ-PES
p.317

HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Observation and Modelization of the Electrostatic...

Observation and Modelization of the Electrostatic Force due to the Local Variations of the Surface Potential by Electrostatic Force Microscopy (EFM)

Article Preview

Abstract:

You might also be interested in these eBooks

Beam Injection Assessment of Defects in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

283-290

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.283

Citation:

Cite this paper

Online since:

December 1998

Authors:

J.F. Bresse

Keywords:

Atomic Force Microscope (AFM), EFM, Electronic Devices, Electrostatic Force, Electrostatic Force Microscopy, Surface Potential

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: