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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Stress Measurements in sub-μm Si Structures Using...

Stress Measurements in sub-μm Si Structures Using Raman Spectroscopy

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

519-524

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.519

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Online since:

December 1998

Authors:

K.F. Dombrowski, I. De Wolf

Keywords:

Mechanical Stress, Raman Spectroscopy, Silicon

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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