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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Electrical Properties of SiGe Epitaxial Layers for...

Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

509-518

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.509

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Online since:

December 1998

Authors:

O. Krüger, Winfried Seifert, Martin Kittler, A. Gutjahr, M. Konuma, K. Said, Jef Poortmans

Keywords:

Backscattered Electrons, Diffusion Length, EBIC, Electron Beam Induced Current (EBIC), Energy Dispersive X-Ray (EDX), Epitaxial Layer, Hydrogen Passivation, Silicon-Germanium (SiGe), Solar Cell, X-Ray Microanalysis

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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