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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Application of Small Pulsed Ion Beams for Depth...

Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures

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Abstract:

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

465-472

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.465

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Online since:

December 1998

Authors:

D. Krüger, K. Iltgen, R. Kurps

Keywords:

Heterostructures, Silicon, ToF-SIMS

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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