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Analysis of Non-Uniform Contamination Profiles by Lifetime Data
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Scanning Photoluminescence for Wafer Characterization
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Failure Analysis of Neutron-Irradiated MQW InGaAsP/InP Lasers by EBIC
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Inline Analysis of Defects in Microelectronic Fabrication by Optical and Scanning Electron Microscopical Techniques
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Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures
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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Scanning Photoluminescence for Wafer...

Scanning Photoluminescence for Wafer Characterization

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Abstract:

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

421-432

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.421

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Online since:

December 1998

Authors:

V. Higgs, F. Chin, Xue Cheng Wang

Keywords:

Defect, Epilayer, Photoluminescence (PL), Si Wafers

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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