Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown

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Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

395-406

DOI:

10.4028/www.scientific.net/SSP.63-64.395

Citation:

M. Tamatsuka and K. Miki, "Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown", Solid State Phenomena, Vols. 63-64, pp. 395-406, 1998

Online since:

December 1998

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