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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Gate Oxide Defect Analysis Using Scanning Electron...

Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

395-406

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.395

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Online since:

December 1998

Authors:

M. Tamatsuka, K. Miki

Keywords:

B-Mode Breakdown, COP, D-Defect, EBIC/TCM, Fowler-Nordheim Tunneling Current, Gate-Oxide Integrity, KOH Etching, Octahedral Void, P-N Junction, RIE/SF6, TOEBIC

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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