Failure Mode Analysis of a 0.25 μm CMOS Technology by Scanning Electron and Ion Beams

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Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

433-442

DOI:

10.4028/www.scientific.net/SSP.63-64.433

Citation:

D. Krüger et al., "Failure Mode Analysis of a 0.25 μm CMOS Technology by Scanning Electron and Ion Beams", Solid State Phenomena, Vols. 63-64, pp. 433-442, 1998

Online since:

December 1998

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$35.00

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