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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64Failure Mode Analysis of a 0.25 μm CMOS Technology...

Failure Mode Analysis of a 0.25 μm CMOS Technology by Scanning Electron and Ion Beams

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

433-442

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.433

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Online since:

December 1998

Authors:

D. Krüger, R. Rosenkranz, B. Tippelt, M. Kuhnert, K. Grießbach, A. Lamprecht, S. Hennecke

Keywords:

0.25 μm Technology, CMOS, Failure Mode Analysis, FIB, Interfacial Layer, Scanning Electron Microscope (SEM)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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