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Relation between Oxide-CMP Induced Defects and Post-CMP Cleaning Strategies
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Evaluation of Post Metal Etch Cleaning by Analyzing the Chemical Compositions and Distributions on the Etched Al Surface
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New Methods for Contamination Control and Dry Cleaning of Silicon Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Evaluation of Post Metal Etch Cleaning by...

Evaluation of Post Metal Etch Cleaning by Analyzing the Chemical Compositions and Distributions on the Etched Al Surface

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.177

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Online since:

November 1998

Authors:

Hua Ling Li, Mikhail R. Baklanov, Werner Boullart, Thierry Conard, B. Brijs, W. Vandervorst, Karen Maex, Ludo Froyen

Keywords:

Downstream H₂O-Based Plasma, Post Metal Etch Strip, X-Ray Photoelectron Spectroscopy (XPS)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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