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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66A Novel Resist and Post-Etch Residue Removal...

A Novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry

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Abstract:

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

165-168

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.165

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Online since:

November 1998

Authors:

Stefan De Gendt, P. Snee, I. Cornelissen, Marcel Lux, Rita Vos, Paul W. Mertens, D. Martin Knotter, M.M. Meuris, Marc Heyns

Keywords:

Ozone Chemistry, Post-Etch Residue Removal, Resist Residue Removal, Via Cleaning

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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