Paper Titles

A Hydrogenated Water Application to Semiconductor Manufacturing
p.71

Investigation of Trace Metals Analyses of Dry Residue on Silicon Wafer Surfaces by TXRF and ICP-MS
p.75

Electrochemical Study for the Characterization of Wet Silicon Oxide Surfaces
p.81

Pre-Diffusion Cleaning Using Ozone and HF
p.85

Novel Back Side Processes for Copper and Pre-Lithography Cleans
p.89

Optimisations of SC-1 Conditions for Sub 0.18μm Technologies in an Industrial Environment
p.93

Reduced Water Consumption for Post Clean Treatment and Metal Ion Contamination on VLSI Structures
p.97

Post SiN Etching Cleaning During Copper and Low K Integration
p.101

Wet Preparation of Defect-Free Hydrogen-Terminated Silicon Wafer Surface and Its Characterization in Atomic-Scale
p.105

HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Novel Back Side Processes for Copper and...

Novel Back Side Processes for Copper and Pre-Lithography Cleans

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces V

Info:

Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

89-92

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.89

Citation:

Cite this paper

Online since:

January 2001

Authors:

Brian Aegerter, Sebastien Lagrange, Curt Dundas, Patrick Van Doorne

Keywords:

Back Side Clean, Capsule^TM, Copper (Cu), Ozone, Single Side Clean, Single Wafer

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: