Novel Back Side Processes for Copper and Pre-Lithography Cleans
p.89
p.89
Optimisations of SC-1 Conditions for Sub 0.18μm Technologies in an Industrial Environment
p.93
p.93
Reduced Water Consumption for Post Clean Treatment and Metal Ion Contamination on VLSI Structures
p.97
p.97
Post SiN Etching Cleaning During Copper and Low K Integration
p.101
p.101
Wet Preparation of Defect-Free Hydrogen-Terminated Silicon Wafer Surface and Its Characterization in Atomic-Scale
p.105
p.105
Detection and Identification of Organic Contamination on Silicon Substrates
p.111
p.111
Preparation and Characterization of Time Dependent Haze on Silicon Surfaces
p.115
p.115
Single Chemistry Cleaning Solution for Advanced Wafer Cleaning
p.119
p.119
Behaviors of Metallic Contaminants in Si Wafer Processing
p.123
p.123
Wet Preparation of Defect-Free Hydrogen-Terminated Silicon Wafer Surface and Its Characterization in Atomic-Scale
Abstract:
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Periodical:
Solid State Phenomena (Volumes 76-77)
Pages:
105-110
Citation:
Online since:
January 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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