Paper Titles

Post SiN Etching Cleaning During Copper and Low K Integration
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Wet Preparation of Defect-Free Hydrogen-Terminated Silicon Wafer Surface and Its Characterization in Atomic-Scale
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Detection and Identification of Organic Contamination on Silicon Substrates
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Preparation and Characterization of Time Dependent Haze on Silicon Surfaces
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Single Chemistry Cleaning Solution for Advanced Wafer Cleaning
p.119

Behaviors of Metallic Contaminants in Si Wafer Processing
p.123

Iron Bulk Concentration Effect on the Yield & Reliability of Thin Oxides
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Gap States at the Interface of Ultra-Thin Oxide and Organic Films on Si(100)
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Modification of Low-K SiCOH Film Porosity by a HF Solution
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HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Single Chemistry Cleaning Solution for Advanced...

Single Chemistry Cleaning Solution for Advanced Wafer Cleaning

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Ultra Clean Processing of Silicon Surfaces V

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Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.119

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Online since:

January 2001

Authors:

Rita Vos, O. Doll, A. Fester, Bernd O. Kolbesen, Marcel Lux, Karine Kenis, Bart Onsia, S. De Gendt, E. Schellkes, Z. Hatcher, Paul W. Mertens, Marc Heyns

Keywords:

APM, Complexing Agent, Metal Contamination, Scintillation Counter

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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