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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Cathodoluminescence Depth Profiling of...

Cathodoluminescence Depth Profiling of Ge-Implanted SiO₂ Layers

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Abstract:

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Beam Injection Assessment of Microstructures in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

119-126

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.119

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Online since:

April 2001

Authors:

Hans Joachim Fitting, T. Barfels, Bernd Schmidt, A. von Czarnowski

Keywords:

Cathodoluminescence, Depth-Profiling, Luminescent Centers, Thermal Annealing

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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