Cathodoluminescence Depth Profiling of Ge-Implanted SiO2 Layers

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Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

119-126

DOI:

10.4028/www.scientific.net/SSP.78-79.119

Citation:

H. J. Fitting et al., "Cathodoluminescence Depth Profiling of Ge-Implanted SiO2 Layers", Solid State Phenomena, Vols. 78-79, pp. 119-126, 2001

Online since:

April 2001

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$35.00

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