Luminescence Centers Characterization in A2B6 Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy

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Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

127-132

DOI:

10.4028/www.scientific.net/SSP.78-79.127

Citation:

M.V. Nazarov "Luminescence Centers Characterization in A2B6 Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy", Solid State Phenomena, Vols. 78-79, pp. 127-132, 2001

Online since:

April 2001

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