Paper Titles

Recombination Properties of Defects in Gallium Nitride
p.95

Cathodoluminescence from Nanocrystals in Mechanically Milled Silicon
p.103

Highly Efficient CdS/CdTe Solar Cells Investigated by Cathodoluminescence Spectroscopy
p.111

Cathodoluminescence Depth Profiling of Ge-Implanted SiO₂ Layers
p.119

Luminescence Centers Characterization in A²B⁶ Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy
p.127

Multi-Band Cathodoluminescence Microscopy for Materials Science
p.133

SEM CL In-Situ Observation during Dislocation Motion in GaAs and CdTe
p.139

Semiconductor Inspection System for Yield Enhancement
p.149

Formation and Current-Voltage Characteristics of SiC/Si-dot/SiC Resonant Tunneling Diodes
p.157

HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Luminescence Centers Characterization in A2B6...

Luminescence Centers Characterization in A²B⁶ Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Beam Injection Assessment of Microstructures in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

127-132

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.127

Citation:

Cite this paper

Online since:

April 2001

Authors:

M.V. Nazarov

Keywords:

Annealing, Cathodoluminescence, Defect, Materials Science, Scanning Electron Microscope (SEM), Semiconductor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: