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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Recombination Properties of Defects in Gallium...

Recombination Properties of Defects in Gallium Nitride

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Abstract:

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

95-102

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.95

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Online since:

April 2001

Authors:

Antonio Castaldini, Anna Cavallini, L. Polenta, Giancarlo Salviati

Keywords:

CL Analyses, Deep Level, Defect, EBIC Analyses, Gallium Nitride (GaN), Photocurrent Persistence, Recombination Activity

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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