Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC

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Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

65-72

DOI:

10.4028/www.scientific.net/SSP.78-79.65

Citation:

O.F. Vyvenko et al., "Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC", Solid State Phenomena, Vols. 78-79, pp. 65-72, 2001

Online since:

April 2001

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$35.00

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