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Simulation of EBIC Contrast for Extended Defects Inclined to the Surface
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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Depth Profiling of the Recombination Activity of...

Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC

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Beam Injection Assessment of Microstructures in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

65-72

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.65

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Online since:

April 2001

Authors:

O.F. Vyvenko, O. Krüger, Martin Kittler

Keywords:

Contaminated Dislocations, Electron Beam Induced Current (EBIC), Hydrogen Passivation, Multicrystalline Silicon

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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