Paper Titles

Beam Injection Studies of Dislocations and Oxygen Precipitates in Semiconductor Silicon
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Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC
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Simulation of EBIC Contrast for Extended Defects Inclined to the Surface
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Reconstruction of Diffusion Length Distribution by the Modulated EBIC and OBIC
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Cathodoluminescence Study of the Y₀ Emission from ZnSe Films
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Recombination Properties of Defects in Gallium Nitride
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Cathodoluminescence from Nanocrystals in Mechanically Milled Silicon
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Cathodoluminescence Depth Profiling of Ge-Implanted SiO₂ Layers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Cathodoluminescence Study of the Y0 Emission from...

Cathodoluminescence Study of the Y₀ Emission from ZnSe Films

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Beam Injection Assessment of Microstructures in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

89-94

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.89

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Online since:

April 2001

Authors:

T. Mita, N. Yamamoto, T. Mitsui, S. Heun, A. Franciosi, J.M. Bonard

Keywords:

Cathodoluminescence, Misfit Dislocation, TEM, ZnSe

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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