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Simulation of EBIC Contrast for Extended Defects Inclined to the Surface
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Reconstruction of Diffusion Length Distribution by the Modulated EBIC and OBIC
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Cathodoluminescence Study of the Y₀ Emission from ZnSe Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Simulation of EBIC Contrast for Extended Defects...

Simulation of EBIC Contrast for Extended Defects Inclined to the Surface

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Beam Injection Assessment of Microstructures in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

73-78

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.73

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Online since:

April 2001

Authors:

V.V. Sirotkin, Eugene B. Yakimov

Keywords:

Computer Simulation, Diffusion Length, Electron Beam Induced Current (EBIC), Semiconductor

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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