Paper Titles

Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon
p.237

Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination
p.253

Defect Characterization in Multicrystalline Silicon Using Scanning Techniques
p.259

Minority Carrier Lifetime Scan Maps Applied to Metallic Impurity Detection in Silicon Wafers
p.267

Surface Concentration Dependence of Diffusion Profile Shape for Phosphorus in Si
p.275

Rapid Diffusion of Titanium along Grain Boundaries in Polysilicon during Electron Beam Evaporation
p.281

EBIC/XPS Study of the Antimony Equilibrium Segregation at Germanium Surface
p.289

Luminescence Studies on In_xGa_1-xN/GaN Multiple Quantum Wells by Selective Excitation Spectroscopy
p.297

Cathodoluminescence of the Composite Nanoscale Dendrite - Like GaAs-Ge Epitaxial Heterostructure
p.301

HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Surface Concentration Dependence of Diffusion...

Surface Concentration Dependence of Diffusion Profile Shape for Phosphorus in Si

Article Preview

Abstract:

You might also be interested in these eBooks

Beam Injection Assessment of Microstructures in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

275-280

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.275

Citation:

Cite this paper

Online since:

April 2001

Authors:

Y. Banno, T. Ichino, H. Uchida, Masaya Ichimura, Eisuke Arai, Masayuki Yoshida

Keywords:

Phosphorus Diffusion, Plateau, Surface Concentration

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: