Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination

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Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

253-258

DOI:

10.4028/www.scientific.net/SSP.78-79.253

Citation:

W. Seifert and M. Kittler, "Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination", Solid State Phenomena, Vols. 78-79, pp. 253-258, 2001

Online since:

April 2001

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$35.00

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