Field Emission Characteristics of Plasma Enhanced Chemical Vapor Deposited Diamond-Like Carbon Films Using Scanning Probe Measurements
p.191
p.191
Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy
p.197
p.197
Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance
p.205
p.205
MC-IR-LST and TEM Combined Analysis of Defects in the OSF-Ring of Cz-Silicon Crystals
p.211
p.211
An In-Situ Observation of Dislocations and Crystal-Melt Interface during the Melting of Silicon
p.217
p.217
Negative Photoconductivity in Polycrystalline Silicon Films Doped with Phosphorus
p.225
p.225
Effects of Lattice Defects on Degradation of Flash Memory Cell
p.231
p.231
Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon
p.237
p.237
Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination
p.253
p.253
An In-Situ Observation of Dislocations and Crystal-Melt Interface during the Melting of Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 78-79)
Pages:
217-224
Citation:
Online since:
April 2001
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© 2001 Trans Tech Publications Ltd. All Rights Reserved
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