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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Effects of Lattice Defects on Degradation of Flash...

Effects of Lattice Defects on Degradation of Flash Memory Cell

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Beam Injection Assessment of Microstructures in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

231-236

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.231

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Cite this paper

Online since:

April 2001

Authors:

K. Kobayashi, H. Ohyama, Masashi Nakabayashi, Eddy Simoen, Cor Claeys, K. Kudou, M. Yoneoka, K. Hayama, S. Kohiki

Keywords:

Activation Energy of Recovery, Flash Memory Cells, Induced Lattice Defects, Interface States (or Traps), Radiation Damage

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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