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HomeSolid State PhenomenaSolid State Phenomena Vols. 78-79Radiation Induced Lattice Defects in n-MOSFETs and...

Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance

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Periodical:

Solid State Phenomena (Volumes 78-79)

Pages:

205-210

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.78-79.205

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Online since:

April 2001

Authors:

K. Kobayashi, H. Ohyama, Masashi Nakabayashi, Eddy Simoen, Cor Claeys, Y. Takami, M. Yoneoka, K. Hayama, S. Kohiki

Keywords:

Activation Energy of Recovery, Induced Lattice Defects, Interface States (or Traps), n-MOSFETs, Radiation Damage

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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