Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance

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Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

205-210

DOI:

10.4028/www.scientific.net/SSP.78-79.205

Citation:

K. Kobayashi et al., "Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance", Solid State Phenomena, Vols. 78-79, pp. 205-210, 2001

Online since:

April 2001

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Price:

$35.00

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