Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon

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Periodical:

Solid State Phenomena (Volumes 78-79)

Edited by:

H. Tomokage and T. Sekiguchi

Pages:

237-252

DOI:

10.4028/www.scientific.net/SSP.78-79.237

Citation:

T. Ono et al., "Electron Beam Induced Current Contrast of Oxygen Precipitation Related Defects in Czochralski Silicon", Solid State Phenomena, Vols. 78-79, pp. 237-252, 2001

Online since:

April 2001

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$35.00

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