Paper Titles

Effect of Pressure and Temperature on the Electrical Properties of LPCVD Silicon-Germanium Thin Films
p.89

Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films?
p.95

Structural Effects in Ultra-Thin Iridium Silicide
p.101

Hydrogen Diffusion through Deformed Si-Si Bonds at Grain Boundaries in Hot-Wire CVD Polycrystalline Silicon Films
p.109

Point Defects in Carbon-Rich Polycrystalline Silicon
p.115

Hydrogen Penetration into Si under Wet Chemical Etching: Experiment and Simulation
p.121

Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films
p.127

Visible Electroluminescence from an ITO/ZnS:Mn/n-Si Device
p.133

Properties Presented by Tin Oxide Thin Films Deposited by Spray Pyrolysis
p.139

HomeSolid State PhenomenaSolid State Phenomena Vols. 80-81Point Defects in Carbon-Rich Polycrystalline...

Point Defects in Carbon-Rich Polycrystalline Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors VI

Info:

Periodical:

Solid State Phenomena (Volumes 80-81)

Pages:

115-120

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.80-81.115

Citation:

Cite this paper

Online since:

November 2001

Authors:

B. Pivac, Igor Kovačević, V. Borjanović

Keywords:

Carbon, Deep Level, Oxygen, Point Defect, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: