Electrical Properties of Grain Boundaries in Titanate Ceramics
p.21
p.21
Local Potential at Atomically Abrupt Oxide Grain Boundaries by Scanning Probe Microscopy
p.33
p.33
Large-Area Polycrystalline p-Type Silicon Films Produced by the Hot Wire Technique
p.47
p.47
The Influence of the Use of Different Catalyzers in Hot-Wire CVD for the Deposition of Polycrystalline Silicon Thin Films
p.53
p.53
Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels
p.59
p.59
Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
p.65
p.65
Effects of Ion Bombardment upon Microcrystalline Silicon Growth
p.71
p.71
Nucleation and Growth of Hydrogenated Microcrystalline Silicon Films: New Insights from Scanning Probe Microscopies
p.77
p.77
Poly-Crystallized SiGe Thin Films in a Low-Temperature Process
p.83
p.83
Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels
Abstract:
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Periodical:
Solid State Phenomena (Volumes 80-81)
Pages:
59-64
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Online since:
November 2001
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© 2001 Trans Tech Publications Ltd. All Rights Reserved
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