Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels

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Periodical:

Solid State Phenomena (Volumes 80-81)

Edited by:

O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner

Pages:

59-64

DOI:

10.4028/www.scientific.net/SSP.80-81.59

Citation:

B. Caussat et al., "Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels", Solid State Phenomena, Vols. 80-81, pp. 59-64, 2001

Online since:

November 2001

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$35.00

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