The Influence of the Use of Different Catalyzers in Hot-Wire CVD for the Deposition of Polycrystalline Silicon Thin Films
p.53
p.53
Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels
p.59
p.59
Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
p.65
p.65
Effects of Ion Bombardment upon Microcrystalline Silicon Growth
p.71
p.71
Nucleation and Growth of Hydrogenated Microcrystalline Silicon Films: New Insights from Scanning Probe Microscopies
p.77
p.77
Poly-Crystallized SiGe Thin Films in a Low-Temperature Process
p.83
p.83
Effect of Pressure and Temperature on the Electrical Properties of LPCVD Silicon-Germanium Thin Films
p.89
p.89
Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films?
p.95
p.95
Structural Effects in Ultra-Thin Iridium Silicide
p.101
p.101
Nucleation and Growth of Hydrogenated Microcrystalline Silicon Films: New Insights from Scanning Probe Microscopies
Abstract:
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Periodical:
Solid State Phenomena (Volumes 80-81)
Pages:
77-82
Citation:
Online since:
November 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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